TIM1011-4L View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

TIM1011-4L

MICROWAVE POWER GaAs FET

Toshiba 

TIM1011-4L

Power Dissipation(PT) vs. Case Temperature(Tc)

40

30

20

10

0

0

40

80

120

160

200

Tc( °C )

IM3 vs. OUTPUT POWER CHARACTERISTICS

-10 VDS= 9 V

f= 11.7GHz

Δf= 5MHz

-20

-30

-40

-50

-60

20

22

24

26

28

30

Po(dBm), Single Carrier Level

4

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