TIP140-S View Datasheet(PDF) - Bourns, Inc
Part Name
Description
Manufacturer
TIP140-S Datasheet PDF : 4 Pages
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TIP140, TIP141, TIP142
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
TIP140
60
Collector-emitter
V(BR)CEO breakdown voltage
IC = 30 mA
IB = 0
TIP141
80
(see Note 5)
TIP142
100
Collector-emitter
VCE = 30 V
IB = 0
TIP140
2
ICEO cut-off current
VCE = 40 V
IB = 0
TIP141
2
VCE = 50 V
IB = 0
TIP142
2
Collector cut-off
VCB = 60 V
IE = 0
TIP140
1
ICBO current
VCB = 80 V
IE = 0
TIP141
1
VCB = 100 V
IE = 0
TIP142
1
Emitter cut-off
IEBO current
VEB = 5 V
IC = 0
2
Forward current
hFE
transfer ratio
VCE = 4 V
VCE = 4 V
IC = 5A
IC = 10 A
(see Notes 5 and 6)
1000
500
Collector-emitter
VCE(sat) saturation voltage
IB = 10 mA
IB = 40 mA
IC = 5 A
IC = 10 A
(see Notes 5 and 6)
2
3
OBSOLETE Base-emitter
VBE
voltage
VCE = 4 V
IC = 10 A
(see Notes 5 and 6)
3
Parallel diode
VEC forward voltage
IE = 10 A
IB = 0
(see Notes 5 and 6)
3.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton Turn-on time
toff
Turn-off time
IC = 10 A
VBE(off) = -4.2 V
IB(on) = 40 mA
RL = 3 Ω
IB(off) = -40 mA
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX
0.9
11
UNIT
V
mA
mA
mA
V
V
V
UNIT
µs
µs
PRODUCT INFORMATION
2
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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