MB84VA2101 View Datasheet(PDF) - Fujitsu

Part Name

Description

Manufacturer

MB84VA2101

16M (× 8) FLASH MEMORY & 2M (× 8) STATIC RAM

Fujitsu 

MB84VA2100-10/MB84VA2101-10

s ERASE AND PROGRAMMING PERFORMANCE (Flash)

Parameter

Sector Erase Time

Byte Programming Time

Chip Programming Time

Erase/Program Cycle

Limits

Min.

Typ.

—

1

—

8

—

16.8

100,000

—

Max.

15

3,600

100

—

Unit

Comment

sec

Excludes programming time

prior to erasure

µs

Excludes system-level

overhead

sec

Excludes system-level

overhead

cycles

s DATA RETENTION CHARACTERISTICS (SRAM)

Parameter

Symbol

Parameter Description

Min. Typ. Max. Unit

VDH Data Retention Supply Voltage

2.0

—

3.6

V

IDDS2 Standby Current

VDH = 3.0 V —

VDH = 3.6 V —

—

50*

µA

—

60

µA

tCDR Chip Deselect to Data Retention Mode Time

0

—

—

ns

tR

Recovery Time

5

—

—

ms

* : 5 µA (Max.) at TA = –20°C to +40°C

• CE1s Controlled Data Retention Mode (Note 1)

VCCs

2.7 V

DATA RETENTION MODE

VIH

CE1s

GND

See Note 2

tCDR

VCCS –0.2 V

See Note 2

tR

26

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