MB84VB2000 View Datasheet(PDF) - Fujitsu

Part Name

Description

Manufacturer

MB84VB2000

8M (× 8/× 16) FLASH MEMORY & 8M (× 8/× 16) FLASH MEMORY

Fujitsu 

MB84VB2000-10/MB84VB2001-10

Table 7 Flash Memory Command Definitions

Command

Sequence

Bus

Write

Cycles

First Bus

Write Cycle

Second Bus

Write Cycle

Third Bus

Write Cycle

Fourth Bus

Read/Write

Cycle

Fifth Bus

Write Cycle

Sixth Bus

Write Cycle

Req’d Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data

Read/Reset

1 XXXH F0H — — — — — — — — — —

Read/Reset

555H

2AAH

555H

3

AAH

55H

F0H RA RD — — — —

AAAH

555H

AAAH

Autoselect

555H

2AAH

555H

3

AAH

55H

90H — — — — — —

AAAH

555H

AAAH

Program

555H

2AAH

555H

4

AAH

55H

A0H PA PD — — — —

AAAH

555H

AAAH

Chip Erase

555H

2AAH

555H

555H

2AAH

555H

6

AAH

55H

80H

AAH

55H

10H

AAAH

555H

AAAH

AAAH

555H

AAAH

Sector Erase

555H

2AAH

555H

555H

2AAH

6

AAH

55H

80H

AAH

55H SA 30H

AAAH

555H

AAAH

AAAH

555H

Sector Erase Suspend Erase can be suspended during sector erase with Addr. (“H” or “L”). Data (B0H)

Sector Erase Resume Erase can be resumed after suspend with Addr. (“H” or “L”). Data (30H)

Set to

Fast Mode

555H

2AAH

555H

3

AAH

55H

20H — — — — — —

AAAH

555H

AAAH

Fast Program

(Note)

XXXH

2

A0H PA PD — — — — — — — —

XXXH

Reset from Fast

Mode (Note)

XXXH

XXXH

2

90H

F0H —

XXXH

XXXH

——

———

——

Extended

Sector Protect

4 XXXH 60H SPA 60H SPA 40H SPA SD — — — —

Address bits A11 to A17 = X = “H” or “L” for all address commands except or Program Address (PA) and Sector

Address (SA).

Bus operations are defined in Tables 2 and 3.

The system should generate the following address patterns:

Word Mode: 555H or 2AAH to addresses A0 to A10

Byte Mode: AAAH or 555H to addresses A-1 and A0 to A10

Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.

RA =Address of the memory location to be read

PA =Address of the memory location to be programmed

Addresses are latched on the falling edge of the write pulse.

SA =Address of the sector to be erased. The combination of A18, A17, A16, A15, A14, A13, and A12 will

uniquely select any sector.

RD =Data read from location RA during read operation.

PD =Data to be programmed at location PA. Data is latched on the falling edge of write pulse.

SPA:Sector address to be protected. Set sector address (SA) and (A6, A1, A0) = (0, 1, 0).

SD:Sector protection verify data. Output 01H at protected sector addresses and output 00H at unprotected

sector addresses.

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