MB84VB2000 View Datasheet(PDF) - Fujitsu

Part Name

Description

Manufacturer

MB84VB2000

8M (× 8/× 16) FLASH MEMORY & 8M (× 8/× 16) FLASH MEMORY

Fujitsu 

MB84VB2000-10/MB84VB2001-10

s ERASE AND PROGRAMMING PERFORMANCE

Parameter

Min.

Limits

Typ.

Max.

Sector Erase Time

—

1

15

Word Programming Time

Byte Programming Time

Chip Programming Time

(1M Byte)

Erase/Program Cycle

—

16

—

8

—

8.4

100,000

—

5,200

3,600

50

—

Unit

Comments

sec

Excludes programming time

prior to erasure

µs Excludes system-level

µs overhead

sec

Excludes system-level

overhead

cycles

s PIN CAPACITANCE

Parameter

Symbol

Parameter Description

CIN

COUT

CIN2

Input Capacitance

Output Capacitance

Control Pin Capacitance

Note: Test conditions TA = 25°C, f = 1.0 MHz

Test Setup

VIN = 0

VOUT = 0

VIN = 0

Typ.

Max.

Unit

TBD

TBD

pF

TBD

TBD

pF

TBD

TBD

pF

s HANDLING OF PACKAGE

Please hadle this package carefully since the sides of package are right angle.

26

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