Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Forward current
Capacitance
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector dark current
Collector dark current
Capacitance (collector to emitter)
Symbol
Test Condition
VF
IF
CT
V(BR)CEO
V(BR)ECO
V(BR)CBO
V(BR)EBO
ICEO
ICBO
CCE
IF = 10 mA
VF = 0.7 V
V = 0 V, f = 1 MHz
IC = 0.5 mA
IE = 0.1 mA
IC = 0.1 mA
IE = 0.1 mA
VCE = 24 V
VCE = 24 V, Ta = 85 °C
VCB = 10 V
V = 0 V, f = 1MHz
TLP630
Min Typ. Max Unit
1.0 1.15 1.3
V
―
2.5
10
μA
―
60
―
pF
55
―
―
V
7
―
―
V
80
―
―
V
7
―
―
V
―
10 100 nA
―
2
50
μA
―
0.1
―
nA
―
10
―
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Current transfer ratio
Saturated CTR
Base photo-current
Collector-emitter saturation
voltage
Off-state collector current
CTR symmetry
IC / IF
IF = ±5 mA, VCE = 5 V
Rank GB
IC / IF(sat)
IPB
IF = ±1 mA, VCE = 0.4 V
Rank GB
IF = ±5 mA, VCB = 5 V
VCE(sat) IC = 2.4 mA, IF = ±8 mA
IC(off)
IC(ratio)
VF = ±0.7 V, VCE = 24 V
IC(IF = -5 mA) /
IC(IF = +5 mA)
(Note 1)
50
100
―
30
―
―
0.33
Note 1:
IC(ratio)
=
IC2(IF
IC1(IF
= IF2,
= IF1,
VCE
VCE
=
=
5V)
5V)
Typ. Max Unit
―
600
%
―
600
60
―
%
―
―
10
―
μA
―
0.4
V
1
10
μA
1
3
―
© 2019
3
Toshiba Electronic Devices & Storage Corporation
2019-06-24