TN6718A View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
TN6718A Datasheet PDF : 3 Pages
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NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCEO Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 10 mA
IC = 100 µA
IE = 100 µA
VCB =80 V
VEB = 5 V
100
V
100
V
5
V
100 nA
10
uA
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
IC = 50 mA, VCE = 1 V
IC = 250 mA, VCE = 1 V
IC = 500 mA, VCE = 1 V
IC = 250 mA, IB = 10 mA
IC = 250 mA, IB = 25 mA
IC = 250 mA, VCE = 1 V
80
-
50 250
20
0.5
V
0.35
1.2
V
SMALL SIGNAL CHARACTERISTICS
Ccb
Output Capacitance
hfe
Small Signal Current Gain
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
VCB = 10 V, IE = 0, f = 1MHz
30
pF
IC = 200 mA, VCE = 5 V, f=20MHz 2.5
25
-
© 1997 Fairchild Semiconductor
tn6718a.lwp Rev A
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