TPD1018 View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

TPD1018

Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit

Toshiba 

TPD1018F

TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit

TPD1018F

High-side Power Switch for Motors, Solenoids, and Lamp Drivers

The TPD1018F is a monolithic power IC for high-side switches. The IC

has a vertical MOS FET output that can be directly driven from a CMOS

or TTL logic circuit (e.g., an MPU). The device is equipped with intelligent

self-protection and diagnostic functions.

Features

z A monolithic power IC with a new structure combining a control block

(Bi-CMOS) and a vertical power MOS FET (π-MOS) on a single chip

z One side of load can be grounded to a high-side switch

z Can directly drive a power load from a microprocessor.

z Built-in protection against overvoltage, thermal shutdown, and load

short-circuiting

z Incorporates a diagnosis function that allows diagnosis output to be

read externally in the event of load short-circuiting, overvoltage, or

overheating.

Weight: 0.08g (typ.)

z Low on-resistance

: RDS (ON) = 0.8Ω (max)

z Low operating current : IDD = 120μA (typ.) (@VDD = 13.2V, VIN = 0V)

z 10-pin SSOP package for surface mounting

Block Diagram

Pin Assignment (top view)

Note: Due to its MOS structure, this product is sensitive to static electricity.

Marking

1018

Part No. (or abbreviation code)

Lot No.

A dot indicates

lead (Pb)-free package or

lead (Pb)-free finish.

1

2006-10-31

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