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TPD1032F(2006) View Datasheet(PDF) - Toshiba

Part Name
Description
Manufacturer
TPD1032F Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Note 4:
a) The power dissipation and thermal resistance values are shown for a single device.
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device.
(During dual operation, power is evenly applied to both device.)
Note 5: Active clamp capability (single pulse) test condition
VDD = 25 V, Starting Tch = 25°C, L = 10 mH, IAR = 3 A, RG = 25 Ω
Note 6: Repetitive rating, pulse width limited by maximum channel temperature.
TPD1032F
Electrical Characteristics
Characteristics
Test
Symbol Circuit
Test Condition
Min Typ. Max Unit
Drain-source clamp voltage V (CL) DSS
Tch=-40110
VIN = 0 V,
ID=1mA
40
60
V
Input threshold voltage
Vth
Tch=25
VDS = 13 V,
Tch=-40110ID=10mA
1.0
2.8
V
0.9
3.0
Protective circuit operation
input voltage range
VIN (opr)
Tch=25
Tch=-40110
3
7
V
3.5
7
Drain cut-off current
IDSS
Tch=25
VIN = 0 V, VDS=20V
Tch=-40110
10
μA
100
Input current
IIN (1)
IIN (2)
Drain-source on resistance RDS (ON)
Tch=25
VIN = 5 V, at normal
operation
VIN = 5 V, when
Tch=-40110overcurrent protective
circuit is actuated
Tch=25
VIN = 5 V, ID = 1 A
Tch=-40110
300
μA
350
0.25 0.4
Ω
0.6
Overtemperature protection
TS
VIN = 5 V
150 160
°C
Overcurrent protection
Tch=25
IS
VIN = 5 V
Tch=-40110
3
3.7
A
2
Switching time
tON
tOFF
Tch=25
30
1
Tch=-40110VDD = 13 V, VIN = 0V/5 V,
Tch=25
ID = 1 A
60
μs
60
Tch=-40110
90
Source-drain diode forward
voltage
VDSF
Tch=25
IF = 3 A, VIN = 0 V
1.7
V
Test Circuit 1
Switching time measuring circuit
Test Circuit
Measured Waveforms
TPD1032F
IN OUT GND
To be set so that
ID = 1 A.
V
VIN Waveform
VOUT Waveform
90%
10%
90%
10%
tON
tOFF
5V
13 V
5
2006-10-31

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