DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TPD1024AS(2002) View Datasheet(PDF) - Toshiba

Part Name
Description
Manufacturer
TPD1024AS Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Maximum Ratings (Ta = 25°C )
Characteristic
Drain-source voltage
Output current
Input voltage
Power dissipation
Operating temperature
Junction temperature
Storage temperature
Symbol
Rating
Unit
VDS (DC)
40
V
ID
1.5
A
VGS
0.5 to 6
V
PD
1.2
W
Topr
40 to 85
°C
Tj
150
°C
Tstg
55 to 150
°C
Recommendable Condition
Characteristic
Input voltage
Symbol
VIN
Test Condition
Electrical Characteristics (Tj = 25°C)
Characteristic
Drain-source breakdown voltage
Operating supply voltage
Current at output off
Input threshold voltage
Input current
On resistance
Thermal shutdown temperature
Overcurrent protection
Switching time
Diode forward voltage
Between drain and source
Avalanche energy
Symbol
V (BR) DSS
VDD (OPR)
IDSS (1)
IDSS (2)
Vth
IGSS
RDS (ON)
TS
IS
tON
tOFF
VDSF
EA
Test
Cir-
Test Condition
cuit
VGS = 0, ID = 10 mA
VGS = 0, VDS = 40 V
VGS = 0, VDS = 24 V
VGS = 10 V, ID = 1 mA
VGS = 5 V,
at normal operation
VGS = 5 V, ID = 1 A
VDS = 12 V, VGS = 5 V
1
VDS = 12 V, VGS = 5 V,
RL = 12
IF = 1.5 A
L = 10 mH, Single pulse
Test Circuit 1
Switching Time
TPD1024AS
Min Typ. Max Unit
4.5
5
6
V
Min Typ. Max Unit
40
V
18
V
3
mA
100 µA
0.8
2.5
V
300 µA
0.5
160
°C
3.5
A
50
µs
10
µs
0.9
1.8
V
30
mJ
3
2002-10-24

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]