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Part Name
Description
TPD1024AS(2002) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
TPD1024AS
(Rev.:2002)
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
Toshiba
TPD1024AS Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
Maximum Ratings
(Ta = 25°C )
Characteristic
Drain-source voltage
Output current
Input voltage
Power dissipation
Operating temperature
Junction temperature
Storage temperature
Symbol
Rating
Unit
V
DS (DC)
40
V
I
D
1.5
A
V
GS
−
0.5 to 6
V
P
D
1.2
W
T
opr
−
40 to 85
°C
T
j
150
°C
T
stg
−
55 to 150
°C
Recommendable Condition
Characteristic
Input voltage
Symbol
V
IN
Test Condition
―
Electrical Characteristics
(Tj = 25°C)
Characteristic
Drain-source breakdown voltage
Operating supply voltage
Current at output off
Input threshold voltage
Input current
On resistance
Thermal shutdown temperature
Overcurrent protection
Switching time
Diode forward voltage
Between drain and source
Avalanche energy
Symbol
V
(BR) DSS
V
DD (OPR)
I
DSS (1)
I
DSS (2)
V
th
I
GSS
R
DS (ON)
T
S
I
S
t
ON
t
OFF
V
DSF
E
A
Test
Cir-
Test Condition
cuit
―
V
GS
= 0, I
D
= 10 mA
―
―
―
V
GS
= 0, V
DS
= 40 V
―
V
GS
= 0, V
DS
= 24 V
―
V
GS
= 10 V, I
D
= 1 mA
―
V
GS
= 5 V,
at normal operation
―
V
GS
= 5 V, I
D
= 1 A
―
―
―
V
DS
= 12 V, V
GS
= 5 V
1
V
DS
= 12 V, V
GS
= 5 V,
R
L
= 12
Ω
―
I
F
= 1.5 A
―
L = 10 mH, Single pulse
Test Circuit 1
Switching Time
TPD1024AS
Min Typ. Max Unit
4.5
5
6
V
Min Typ. Max Unit
40
―
―
V
―
―
18
V
―
―
3
mA
―
―
100 µA
0.8
―
2.5
V
―
―
300 µA
―
―
0.5
Ω
―
160
―
°C
―
3.5
―
A
―
50
―
µs
―
10
―
µs
―
0.9
1.8
V
30
―
―
mJ
3
2002-10-24
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