TPD1024S View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
TPD1024S Datasheet PDF : 8 Pages
| |||
TPD1024S
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDS (DC)
40
V
Output current
ID
1.5
A
Input voltage
VGS
−0.5 ~ 6
V
Ta = 25°C
Power dissipation
PD
Tc = 25°C
1
W
10
Operating temperature
Topr
−40 ~ 85
°C
Junction temperature
Storage temperature
Tj
150
°C
Tstg
−55 ~ 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Tj = 25°C)
Characteristic
Drain-source breakdown voltage
Operating supply voltage
Current at output off
Input threshold voltage
Input current
On resistance
Thermal shutdown temperature
Overcurrent protection
Switching time
Diode forward voltage
Between drain and source
Avalanche energy
Symbol
V(BR) DSS
VDD (OPR)
IDSS (1)
IDSS (2)
Vth
IGSS
RDS (ON)
TS
IS
tON
tOFF
VDSF
EA
Test
Cir-
Test Condition
cuit
― VGS = 0, ID = 10 mA
―
―
― VGS = 0, VDS = 40 V
― VGS = 0, VDS = 24 V
― VDS = 10 V, ID = 1 mA
―
VGS = 5 V,
at normal operation
― VGS = 5 V, ID = 1 A
―
―
― VDS = 12 V, VGS = 5 V
1
VDS = 12 V, VGS = 5 V,
RL = 12Ω
― IF = 1.5 A
― L = 10 mH, Single pulse
Min Typ. Max Unit
40
―
―
V
―
―
18
V
―
―
3
mA
―
―
100
μA
0.8
―
2.5
V
―
―
300
μA
―
―
0.5
Ω
― 160 ―
°C
―
3.5
―
A
―
50
―
μs
―
10
―
μs
―
0.9
1.8
V
30
―
―
mJ
Test Circuit 1
3
2006-10-31
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