TPD1009S View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
TPD1009S Datasheet PDF : 11 Pages
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TPD1009S
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
TPD1009S
High−side Power Switch for Motors, Solenoids, and Lamp Drivers.
TPD1009S is a monolithic power IC for high−side switches. The IC has a
vertical MOS FET output which can be directly driven from a CMOS or
TTL logic circuit (eg, an MPU). The device offers intelligent self−protection
and diagnostic functions.
Features
A monolithic power IC with a new structure combining a control block
(Bi−CMOS) and a vertical power MOS FET (π−MOS) on a single chip.
One side of load can be grounded to a high−side switch.
Can directly drive a power load from a microprocessor.
Built−in protection against thermal shutdown and load short
circuiting.
Incorporates a diagnosis function that allows diagnosis output to be
read externally at load short circuiting, opening, or overtemperature.
Up to −10V of counterelectromotive force from an L load can be
applied.
Low on resistance
: RON = 60mΩ (max)
Low operating current : IDD = 1mA (typ.) (@VDD = 12V, VIN = 0V)
5−pin TO−220 insulated package.
Three standard lead configurations.
Pin Assignment
Weight
SSIP5−P−1.70C : 2.1g (typ.)
ZIP5−P−1.70L : 2.1g (typ.)
ZIP5−P−1.70K : 2.1g (typ.)
Note: That because of its MOS structure, this product is sensitive to static electricity.
1
2002-10-24
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