TS2012FC View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
TS2012FC Datasheet PDF : 31 Pages
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TS2012FC
3
Electrical characteristics
Electrical characteristics
3.1
Electrical characteristics tables
Table 5. VCC = +5V, GND = 0V, Vic=2.5V, Tamb = 25°C (unless otherwise specified)
Symbol
Parameters and test conditions
Min. Typ. Max. Unit
Supply current
ICC
No input signal, no load, both channels
ISTBY
Voo
Po
THD + N
Efficiency
PSRR
Crosstalk
CMRR
Gain
Zin
Standby current
No input signal, VSTBY = GND
Output offset voltage
Floating inputs, G = 6dB, RL = 8Ω
Output power
THD + N = 1% max, f = 1kHz, RL = 4Ω
THD + N = 1% max, f = 1kHz, RL = 8Ω
THD + N = 10% max, f = 1kHz, RL = 4Ω
THD + N = 10% max, f = 1kHz, RL = 8Ω
Total harmonic distortion + noise
Po = 0.8W, G = 6dB, f =1kHz, RL = 8Ω
Efficiency per channel
Po = 1.85W, RL = 4Ω +15µH
Po = 1.16 W, RL = 8Ω+15µH
Power supply rejection ratio with inputs grounded
Cin=1µF (1),f = 217Hz, RL = 8Ω, Gain=6dB,
Vripple = 200mVpp
Channel separation
Po = 0.9W, G = 6dB, f =1kHz, RL = 8Ω
Common mode rejection ratio
Cin=1µF, f = 217Hz, RL = 8Ω, Gain=6dB,
ΔVICM = 200mVpp
Gain value with no load
G1 = G0 = VIL
G1 = VIL & G0 = VIH
G1 = VIH & G0 = VIL
G1 = G0 = VIH
Single-ended input impedance
Referred to ground
Gain = 6dB
Gain = 12dB
Gain = 18dB
Gain = 24dB
FPWM
SNR
Pulse width modulator base frequency
Signal to noise ratio (A-weighting)
Po = 1.1W, G = 6dB, RL = 8Ω
5
7
mA
1
2
µA
25
mV
1.85
1.15
W
2.5
1.6
0.5
%
78
%
88
65
dB
90
dB
63
dB
5.5
6
6.5
11.5
12
12.5
dB
17.5
18
18.5
23.5
24
24.5
24
30
36
kΩ
24
30
36
12
15
18
6
7.5
9
190 280 370
kHz
99
dB
7/31
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