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TS4962IQT(2007) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
TS4962IQT
(Rev.:2007)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TS4962IQT Datasheet PDF : 46 Pages
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TS4962
Electrical characteristics
Table 6.
Symbol
Electrical characteristics at VCC = +4.2V with GND = 0V, Vicm = 2.1V, and
Tamb = 25°C (unless otherwise specified)(1)
Parameter
Min. Typ. Max. Unit
ICC
ISTBY
Voo
Pout
Supply current
No input signal, no load
Standby current (2)
No input signal, VSTBY = GND
Output offset voltage
No input signal, RL = 8Ω
Output power, G=6dB
THD = 1% Max, f = 1kHz, RL = 4Ω
THD = 10% Max, f = 1kHz, RL = 4Ω
THD = 1% Max, f = 1kHz, RL = 8Ω
THD = 10% Max, f = 1kHz, RL = 8Ω
2.1
3
mA
10 1000 nA
3
25
mV
1.5
1.95
W
0.9
1.1
Total harmonic distortion + noise
Pout = 600 mWRMS, G = 6dB, 20Hz < f < 20kHz
THD + N RL = 8Ω + 15µH, BW < 30kHz
2
%
Pout = 700mWRMS, G = 6dB, f = 1kHz
RL = 8Ω + 15µH, BW < 30kHz
0.35
Efficiency
Efficiency
Pout = 1.45 WRMS, RL = 4Ω +≥ 15µH
Pout = 0.9 WRMS, RL = 8Ω+≥ 15µH
78
%
88
Power supply rejection ratio with inputs grounded (3)
PSRR
dB
f = 217Hz, RL = 8Ω, G=6dB, Vripple = 200mVpp
63
Common mode rejection ratio
CMRR
f = 217Hz, RL = 8Ω, G = 6dB, ΔVic = 200mVpp
57
dB
Gain Gain value (Rin in kΩ)
-2---7---3----k---Ω---
Rin
3----0---0----k---Ω---
Rin
3----2---7----k---Ω---
Rin
V/V
RSTBY
FPWM
SNR
tWU
tSTBY
Internal resistance from standby to GND
Pulse width modulator base frequency
Signal to noise ratio (A-weighting)
Pout = 0.8W, RL = 8Ω
Wake-up time
Standby time
273 300 327
kΩ
200 280 360 kHz
85
dB
5
10
ms
5
10
ms
11/46

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