TS4962IQT(2007) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
TS4962IQT Datasheet PDF : 46 Pages
| |||
TS4962
3
Electrical characteristics
Electrical characteristics
3.1
Electrical characteristics tables
Table 5.
Electrical characteristics at VCC = +5V,
with GND = 0V, Vicm = 2.5V, and Tamb = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
ICC
ISTBY
Voo
Supply current
No input signal, no load
Standby current (1)
No input signal, VSTBY = GND
Output offset voltage
No input signal, RL = 8Ω
Output power, G=6dB
THD = 1% Max, f = 1kHz, RL = 4Ω
Pout
THD = 10% Max, f = 1kHz, RL = 4Ω
THD = 1% Max, f = 1kHz, RL = 8Ω
THD = 10% Max, f = 1kHz, RL = 8Ω
THD + N
Total harmonic distortion + noise
Pout = 850 mWRMS, G = 6dB, 20Hz < f < 20kHz
RL = 8Ω + 15µH, BW < 30kHz
Pout = 1WRMS, G = 6dB, f = 1kHz
RL = 8Ω + 15µH, BW < 30kHz
Efficiency
Efficiency
Pout = 2 WRMS, RL = 4Ω +≥ 15µH
Pout =1.2 WRMS, RL = 8Ω+≥ 15µH
PSRR
Power supply rejection ratio with inputs grounded (2)
f = 217Hz, RL = 8Ω, G=6dB, Vripple = 200mVpp
Common mode rejection ratio
CMRR
f = 217Hz, RL = 8Ω, G = 6dB, ΔVic = 200mVpp
Gain Gain value (Rin in kΩ)
-2---7---3----k----Ω--
Rin
RSTBY Internal resistance from standby to GND
273
FPWM Pulse width modulator base frequency
200
SNR
Signal to noise ratio (A weighting),
Pout = 1.2W, RL = 8Ω
tWU Wake-up time
tSTBY Standby time
2.3
10
3
2.2
2.8
1.4
1.7
2
0.4
78
88
63
57
3----0---0----k---Ω---
Rin
300
280
85
5
5
3.3
1000
25
3----2---7----k---Ω---
Rin
327
360
10
10
Unit
mA
nA
mV
W
%
%
dB
dB
V/V
kΩ
kHz
dB
ms
ms
9/46
Share Link: 