DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TSH345IDT View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
TSH345IDT Datasheet PDF : 23 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
TSH345
Table 3.
Symbol
Electrical characteristics at VCC = +5 V single supply, Tamb = 25°C
(unless otherwise specified) (continued)
Test conditions
Min. Typ. Max. Unit
Bandwidth
Standard F2 selected, small signal, VICM = 0.5 V, RL = 150 Ω
definition -3 dB bandwidth
with
-1 dB bandwidth
13
progressive Attenuation
scanning
F2 selected/F = 54 MHz, small signal,
32
VICM = 0.5 V, RL = 150 Ω
Bandwidth
F3 selected, small signal, VICM = 0.5 V, RL = 150 Ω
-3 dB bandwidth
High
-1 dB bandwidth
25
definition
Attenuation
F3 selected/F = 74.25 MHz, small signal,
25
VICM = 0.5 V, RL = 150 Ω
D
Delay between each channel
Group delay variation
gd
F1 selected/F = 0 to 6 MHz
Δg
ΔΦ
Noise
Differential gain
F1 selected/F = 6 MHz, RL = 150 Ω
Differential phase
F1 selected/F = 6 MHz, RL = 150 Ω
Total input voltage noise in Standard Definition
F = 100 kHz, RIN = 50 Ω
eN
Total input voltage noise in High Definition
F = 100 kHz, RIN = 50 Ω
Standby mode
Total current consumption in standby mode
ISTBY
Fs1 = 1, Fs0 = 1
Tamb
-40° C < Tamb < +85° C
Ton
Time from standby to active mode
Toff
Time from active to standby mode
Fs1, Fs0 and Mux features
Vhigh High level
0.9
Vlow
Low level
21
18
38
36
32
32
0.5
11
0.38
0.5
74
86
440
480
5
5
MHz
dB
MHz
dB
ns
ns
%
°
nV/Hz
690
µA
µs
µs
V
0.3
V
4/23

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]