TSH691 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
TSH691 Datasheet PDF : 10 Pages
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TSH691
ELECTRICAL CHARACTERISTICS
Tamb = 25oC, VCC & Vbias = +2.7V, ZL = 50Ω
Parameter
Supply Current
S21 (Vin = -20dBm, f = 450MHz)
S21 (Vin = -20dBm, f = 900MHz)
Output Power 1dB Compression (f = 450MHz)
3rd Order Intercept Point (f = 430MHz)
S12 (Reverse Isolation @ f = 400MHz)
S11 (Input Return Loss @ f = 450MHz)
S11 (Input Return Loss @ f = 900MHz)
Noise Figure @ f = 450MHz
Noise Figure @ f = 900MHz
Rth(j-a) Junction Ambient Thermal Resistance For SO8 Package
All parameters with min. or max. figures are 100% tested.
Min.
20
140
TSH691
Typ.
46
23
17
12
22
-46
-15
-10
4.5
5.4
Max.
30
180
SO8 PACKAGE THERMAL RESISTIVITY
Tamb (°C)
150
135
120
105
90
75
60
45
30
1
DEVICE
OVERSTRESSED
Rthmin
Rthmax
RIGHT BEHAVIOUR
2
3
4
5
6
Vcc (V)
Unit
mA
dB
dB
dBm
dBm
dB
dB
dB
dB
dB
oC/W
DEFINITION
Rth(j-a)
Tj (oC)
Tamb (oC)
Pd (W)
Junction Ambient Thermal Resistance
Maximum Die Juntion Temperature
(~ 150oC)
Ambient Temperature
Maximum Dissipated Power
(Pd = 0.75 VCC • ICC)
REMARKS
The right behaviour is obtained when the follow-
ing equation is fulfilled.
Tj - Tamb = Pd • Rth(j-a)
3/10
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