Philips Semiconductors
Data amplifier and laser supply circuit for CD
audio and video optical systems (ADALASLC)
Product specification
TZA1025
CHARACTERISTICS
VDD = 2.4 V; VDD(L) − Vo(LASER) = 0.55 V; Ii(DIN) = 0 mA; Io(LASER) = 80 mA; VCMFB = 1⁄2VDD; PWRON = HIGH;
CDRW = LOW; CCFIL = 10 nF; RRFFB = 10 kΩ; pin RGADJ connected to ground; Tamb = 25 °C; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
VDD
supply voltage
2.4
−
VDDL(L)
laser supply voltage
2.4
−
IDD
supply current
−
3
Iq
quiescent supply
PWRON = LOW
−
−
current
5.5
V
5.5
V
−
mA
40
µA
RF amplifier
Ii(DIN)
central diode input
current
−70
−
Zi(DIN)
VCMFB
central diode input
impedance
common mode
feedback input voltage
−
100
0.7
1⁄2VDD
VO(RFEQO)
Vo(RFEQO)
RF amplifier output
DC-level
RF amplifier output
voltage
CDRW = LOW
CDRW = HIGH
VCMFB − 0.05 −
VCMFB − 0.35 −
0.25
−
Zo(RFEQO)
RF amplifier output
impedance
note 1
−
100
td(f)(RF)
RF flatness delay
−
−
GRF
RF path gain boost
f = 720 kHz; note 2 −
5
Ztr(RF)
RF transimpedance note 3
CDRW = LOW
9.2
9.8
CDRW = HIGH
35.6
38
THDRF
RF total harmonic
distortion
note 4
−
−50
PSRRRF
RF power supply ripple 0 to 100 kHz
−
40
rejection
Vn(in-band)(rm in-band noise
s)
(RMS value)
note 4
−
2.7
Laser supply circuit
Vdrop
Io(LASER)(max
)
Zo(LASER)
drop voltage
maximum laser output
current
laser output impedance
note 5
Vdrop = 0.55 V; note 6
Vdrop = 0.55 V; note 7
Io(LASER) = 53 mA
Io(LASER) = 20 mA
0.55
80
−
−
−
−
500
1 200
+70
µA
−
Ω
VDD − 0.4
V
VCMFB + 0.25 V
VCMFB + 0.35 V
VDD − 0.25 V
−
Ω
10
ns
−
dB
10.4
kΩ
40.4
kΩ
−
dB
−
dB
−
mV
5.5
V
−
mA
−
Ω
−
Ω
1998 Oct 30
7