Philips Semiconductors
30 Mbits/s up to 1.25 Gbits/s laser drivers
Product specification
TZA3047A; TZA3047B
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
ERmax
high extinction ratio setting dual-loop set-up; IER < −10 µA;
note 3
linear scale
13
15
ERacc
Vref(ER)
IER
relative accuracy of ER
reference voltage on
pin ER
current sink on pin ER
dB scale
temperature and VCCA
variations; ER = 10;
AVR = 550 µA
IER = −35 to −5 µA;
CER < 100 pF
11
11.8
−10 −
1.15 1.20
−35 −
Average setting for dual-loop control and average loop control: pins MON and AVR
Iav(MON)(low)
Iav(MON)(max)
low average monitor
current setting
maximum average monitor
current setting
IAVR > −280 µA
dual-loop (ER = 5)
average loop (pin ER to GND)
IAVR = −15.0 µA
dual-loop (ER = 5)
−
−
1 200
−
−
1 300
average loop (pin ER to GND) 1200 1300
∆Iav(MON)
Vref(AVR)
Isink(AVR)
relative accuracy of
average current on
pin MON
reference voltage on
pin AVR
current sink on pin AVR
temperature and VCCA
variations; ER = 10;
AVR = 550 µA
IAVR = −250 to −15 µA;
CAVR < 100 pF
−10 −
1.15 1.20
−280 −
Control loop modulation output: pin MODOUT
Isource(MODOUT) source current
Isink(MODOUT) sink current
VMODOUT = 0.5 to 1.5 V;
CMODOUT < 100 pF
VMODOUT = 0.5 to 1.5 V;
CMODOUT < 100 pF
−
−
200 −
Control loop bias output: pin BIASOUT
Isource(BIASOUT) source current
Isink(BIASOUT) sink current
VBIASOUT = 0.5 to 1.5 V;
CBIASOUT < 100 pF
VBIASOUT = 0.5 to 1.5 V;
CBIASOUT < 100 pF
−
−
200 −
Bias current source: pins BIASIN and BIAS
gm(bias)
bias transconductance
Isource(BIASIN) source current at
pin BIASIN
VBIASIN = 0.5 to 1.5 V
VBIAS = VCCO = 3.3 V
VBIAS = 4.1 V; VCCO = 5.0 V
VBIASIN = 0.5 to 1.5 V
90
95
−110
110
110
−100
IBIAS(max)
IBIAS(min)
IBIAS(dis)
maximum bias current
minimum bias current
bias current at disable
VBIASIN = 1.8 V
VBIASIN = 0 to 0.4 V
VENABLE < 0.8 V
100 −
−
0.2
−
−
MAX. UNIT
−
−
−
dB
+10 %
1.25 V
−5
µA
150 µA
150 µA
−
µA
−
µA
+10 %
1.25 V
−15 µA
−200 µA
−
µA
−200 µA
−
µA
125 mA/V
130 mA/V
−95 µA
−
mA
0.4 mA
30
µA
2003 Jun 05
11