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UAA3535 View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
UAA3535
Philips
Philips Electronics Philips
UAA3535 Datasheet PDF : 24 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
Philips Semiconductors
Low power GSM/DCS/PCS multi-band transceiver
Objective specification
UAA3535HL
SYMBOL
PARAMETER
CONDITIONS
MIN.
Ri
input resistance
single-ended
Ci
input capacitance
single-ended
Pi
input power
23
s11
input reflection coefficient
F
noise figure
Tamb = 25 °C
CP1
1 dB input compression point Tamb = 25 °C
SPURP(RFin) power level of spurious
LO leakage
signals at RF input
other
PHASE DETECTOR; PIN TXCPO
ICP(max)
charge pump maximum sink GSM mode; external
1
or source current
resistance of 1800 1%
for minimum output
current; TXI = 0; note 6
DCS and PCS mode;
0.5
external resistance of
1800 1% for minimum
output current; TXI = 1;
note 6
KΦ
phase-frequency detector for ICP = 1 mA
gain
KΦ
phase-frequency detector
gain variation
over output voltage range
Vo
output voltage
Ro
output resistance
0.4
Vo = V-----C---C--2-(--P---H---D---)
Ro(pd)
output resistance power
TX mode disabled
down
LOo
IM3o
local oscillator feedthrough note 7
third-order products level
offset +3 × 67.7 kHz or
3 × 67.7 kHz; note 7
IMo
ΦNOISE
image level
phase noise output power
density
SPURL(4fm)
SPURL(8fm)
level of spurious signals at
4 × fmod
level of spurious signals at
8 × fmod
fIFLO 67.7 kHz; note 7
f = 400 kHz;
Tamb = 25 °C; note 7
f = 1.8 MHz;
Tamb = 25 °C; note 7
f = 20 MHz; Tamb = 25 °C
fmod = 67.7 kHz;
notes 7 and 8
fmod = 67.7 kHz; note 7
RF LO buffer
RF SOURCE CONNECTED AT PIN RFLOIA AND RFLOIB
fi(RF)
RF input frequency
1 788
TYP.
50
20
10
10
20
50
2
1
0.16
10
1
40
55
45
MAX.
17
45
45
UNIT
pF
dBm
dB
dB
dBm
dBm
dBm
4
mA
2
mA
mA/rad
10
%
VCC(CP) 0.4 V
k
32
50
37
117
117
136
50
55
k
dBc
dBc
dBc
dBc/Hz
dBc/Hz
dBc/Hz
dBc
dBc
2 002
MHz
2000 Feb 17
15

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