Philips Semiconductors
Low power GSM/DCS/PCS multi-band transceiver
Objective specification
UAA3535HL
SYMBOL
PARAMETER
CONDITIONS
MIN.
Ri
input resistance
single-ended
−
Ci
input capacitance
single-ended
−
Pi
input power
−23
s11
input reflection coefficient
−
F
noise figure
Tamb = 25 °C
−
CP1
1 dB input compression point Tamb = 25 °C
−
SPURP(RFin) power level of spurious
LO leakage
−
signals at RF input
other
−
PHASE DETECTOR; PIN TXCPO
ICP(max)
charge pump maximum sink GSM mode; external
1
or source current
resistance of 1800 Ω 1%
for minimum output
current; TXI = 0; note 6
DCS and PCS mode;
0.5
external resistance of
1800 Ω 1% for minimum
output current; TXI = 1;
note 6
KΦ
phase-frequency detector for ICP = 1 mA
−
gain
∆KΦ
phase-frequency detector
gain variation
over output voltage range −
Vo
output voltage
Ro
output resistance
0.4
Vo = V-----C---C--2-(--P---H---D---)
−
Ro(pd)
output resistance power
TX mode disabled
−
down
LOo
IM3o
local oscillator feedthrough note 7
−
third-order products level
offset +3 × 67.7 kHz or −
−3 × 67.7 kHz; note 7
IMo
ΦNOISE
image level
phase noise output power
density
SPURL(4fm)
SPURL(8fm)
level of spurious signals at
4 × fmod
level of spurious signals at
8 × fmod
fIFLO − 67.7 kHz; note 7 −
∆f = 400 kHz;
−
Tamb = 25 °C; note 7
∆f = 1.8 MHz;
−
Tamb = 25 °C; note 7
∆f = 20 MHz; Tamb = 25 °C −
fmod = 67.7 kHz;
−
notes 7 and 8
fmod = 67.7 kHz; note 7 −
RF LO buffer
RF SOURCE CONNECTED AT PIN RFLOIA AND RFLOIB
fi(RF)
RF input frequency
1 788
TYP.
50
−
−20
−10
10
−20
−50
−
2
1
0.16
−
−
10
1
−40
−55
−45
−
−
−
−
−
−
MAX.
−
−
−17
−
−
−
−45
−45
UNIT
Ω
pF
dBm
dB
dB
dBm
dBm
dBm
4
mA
2
mA
−
mA/rad
10
%
VCC(CP) − 0.4 V
−
kΩ
−
−32
−50
−37
−117
−117
−136
−50
−55
kΩ
dBc
dBc
dBc
dBc/Hz
dBc/Hz
dBc/Hz
dBc
dBc
2 002
MHz
2000 Feb 17
15