1N5059 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
1N5059 Datasheet PDF : 7 Pages
| |||
Philips Semiconductors
Controlled avalanche rectifiers
Product specification
1N5059 to 1N5062
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
This package is hermetically sealed
and fatigue free as coefficients of
Rugged glass package, using a high expansion of all used parts are
temperature alloyed construction.
matched.
2/3 pagek(Datasheet)
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VRRM
VRWM
VR
IF(AV)
IFSM
ERSM
Tstg
Tj
repetitive peak reverse voltage
1N5059
1N5060
1N5061
1N5062
crest working reverse voltage
1N5059
1N5060
1N5061
1N5062
continuous reverse voltage
1N5059
1N5060
1N5061
1N5062
average forward current
non-repetitive peak forward current
non-repetitive peak reverse avalanche
energy
storage temperature
junction temperature
Ttp = 45 °C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
Tamb = 80 °C; PCB mounting
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
t = 10 ms half sinewave
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
see Fig.5
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−65
−65
MAX. UNIT
200 V
400 V
600 V
800 V
200 V
400 V
600 V
800 V
200 V
400 V
600 V
800 V
2.0 A
0.8 A
50 A
20 mJ
+175 °C
+175 °C
1996 Jun 19
2
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