UF5305L-TA3-R View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
UF5305L-TA3-R Datasheet PDF : 5 Pages
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UF5305
Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-55
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous VGS=-10V, TC=25°C
VGS=-10V, TC=100°C
ID
-31
A
-22
A
Pulsed (Note 2)
IDM
-110
A
Avalanche Current (Note 2)
IAR
-16
A
Single Pulse (Note 3)
Avalanche Energy
Repetitive (Note 2)
EAS
280
mJ
EAR
11
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-5.0
V/ns
TO-220
110
W
Power Dissipation (TC=25°C)
TO-251
PD
TO-252
42
W
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. VDD=-25V, Starting TJ=25°C, L=2.1mH, RG=25Ω, IAS=-16A
4. ISD≤-16A, di/dt≤-280A/µs, VDD≤BVDSS, TJ≤150°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
TO-220
62
Junction to Ambient
TO-251
θJA
90
TO-252
TO-220
1.1
Junction to Case
TO-251
θJC
TO-252
2.97 (Note)
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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