ULBM25 View Datasheet(PDF) - Advanced Semiconductor
Part Name
Description
Manufacturer
ULBM25 Datasheet PDF : 2 Pages
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ULBM25
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM25 is a gold metallized
RF power transistor designed for 12.5
Class-C applications in 450-513 MHz
frequency range. It utilizes Emitter
Ballasting to achieve high reliability
and ruggedness.
FEATURES:
• Internal Input Matching Network
• PG = 6.5 dB at 25 W/470 MHz
• Omnigold™ Metalization System
• Common Emitter, Class-C , 12.5 V
MAXIMUM RATINGS
IC
4.8 A
VCBO
36 V
VCEO
16 V
VCES
36 V
VEBO
4.0 V
PDISS
70 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
2.5 °C/W
CHARACTERISTICS TC = 25°C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCES
IC = 10 mA
BVEBO
IE = 5.0 mA
ICES
VCE = 12.5 V
hFE
VCE = 5.0 V
IC = 1.0 A
PACKAGE STYLE .500 6L FLG
C
A
EC
D
2x ØN
FULL R
BE
B
E
.725/18,42
G
F
H
JI
M
K
L
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.150 / 3.43
.160 / 4.06
B
.045 / 1.14
C
.210 / 5.33
.220 / 5.59
D
.835 / 21.21
.865 / 21.97
E
.200 / 5.08
.210 / 5.33
F
.490 / 12.45
.510 / 12.95
G
.003 / 0.08
.007 / 0.18
H
.125 / 3.18
I
.725 / 18.42
J
.970 / 24.64
.980 / 24.89
K
.090 / 2.29
.105 / 2.67
L
.150 / 3.81
.170 / 4.32
M
.285 / 7.24
N
.120 / 3.05
.135 / 3.43
ORDER CODE: ASI10683
MINIMUM TYPICAL MAXIMUM
16
36
4.0
5
10
150
UNITS
V
V
V
mA
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/2
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