UNA0216 View Datasheet(PDF) - Panasonic Corporation

Part Name

Description

Manufacturer

UNA0216

Small Signal Transistor Arrays

Panasonic Corporation 

Small Signal Transistor Arrays

I Electrical Characteristics (Ta=25±2˚C)

Parameter

Symbol

Conditions

min

Collector cutoff current

ICBO

Collector to base voltage

VCBO

Collector to emitter voltage

VCEO

Emitter to base voltage

VEBO

Forward current transfer ratio

hFE

Collector to emitter saturation voltage VCE(sat)1

Transition frequency

fT

Collector output capacitance

Cob

Forward voltage (DC)

VF

(NPN) VCB = 10V

(PNP) VCB = –10V

(NPN) IC = 10µA

12

(PNP) IC = –10µA

–12

(NPN) IC = 1mA

10

(PNP) IC = –1mA

–10

(NPN) IE = 10µA

7

(PNP) IE = –10µA

–7

(NPN) VCE = 1V, IC = 0.5A*

200

(PNP) VCE = –1V, IC = – 0.5A*

200

(NPN) IC = 2A, IB = 50mA

(PNP) IC = –2A, IB = –50mA

(NPN) VCB = 6V, IE = –50mA, f = 200MHz

(PNP) VCB = –6V, IE = 50mA, f = 200MHz

(NPN) VCB = 10V, IE = 0, f = 1MHz

(PNP) VCB = 10V, IE = 0, f = 1MHz

(NPN) IF = 1A

(PNP) IF = –1A

*Pulse measurement

UNA0216

typ max Unit

1

µA

–1

V

V

V

800

800

0.25

V

– 0.45

150

MHz

150

50

pF

65

1.5

V

1.5

Characteristics charts of PNP transistor block

PT — Ta

0.6

0.5

IC — VCE

–6

Ta=25˚C

–5

0.4

–4

0.3

–3

IB= – 8mA –7mA

–6mA –5mA

– 4mA

0.2

–2

– 3mA

– 2mA

0.1

–1

–1mA

0

0 20 40 60 80 100 120 140 160

Ambient temperature Ta (˚C)

0

0 –2 –4 –6 –8 –10 –12

Collector to emitter voltage VCE (V)

IC — VBE

–6

VCE= –1V

–5

–4

25˚C

Ta=75˚C –25˚C

–3

–2

–1

0

0 –0.4 –0.8 –1.2 –1.6 –2.0 –2.4

Base to emitter voltage VBE (V)

2

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