UNR31A0 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
UNR31A0 Datasheet PDF : 3 Pages
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Transistors with built-in Resistor
UNR31A0
Silicon PNP epitaxial planar type
For digital circuits
■ Features
• Suitable for high-density mounting and downsizing of the equipment
• Contribute to low power consumption
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−50
V
Collector-emitter voltage (Base open) VCEO
−50
V
Collector current
IC
−80
mA
Total power dissipation
PT
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg −55 to +125 °C
0.33+–00..0025
3
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5°
Unit: mm
0.10+–00..0025
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
Marking Symbol: CD
Internal Connection
R1 (47 kΩ)
C
B
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
−50
V
Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0
−50
V
Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0
− 0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0
− 0.5 µA
Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0
− 0.1 mA
Forward current transfer ratio
hFE VCE = −10 V, IC = −5 mA
160
460
Collector-emitter saturation voltage
VCE(sat) IC = −10 mA, IB = − 0.3 mA
− 0.25 V
Output voltage high-level
VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ −4.9
V
Output voltage low-level
VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
− 0.2 V
Input resistance
R1
−30% 47 +30% kΩ
Transition frequency
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: October 2003
SJH00053BED
1
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