UPA1730TP View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
UPA1730TP Datasheet PDF : 8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1730TP
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA1730TP which has a heat spreader is a P-Channel
MOS Field Effect Transistor designed for power management
applications of notebook computers and Li-ion battery protection
circuit.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8, 9 ; Drain
FEATURES
• Low on-state resistance
RDS(on)1 = 9.5 mΩ MAX. (VGS = –10 V, ID = –6.5 A)
RDS(on)2 = 13.5 mΩ MAX. (VGS = –4.5 V, ID = –6.5 A)
RDS(on)3 = 15.0 mΩ MAX. (VGS = –4.0 V, ID = –6.5 A)
• Low Ciss: Ciss = 3800 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power HSOP8)
ORDERING INFORMATION
PART NUMBER
µ PA1730TP
PACKAGE
Power HSOP8
1
4
5.2
+0.17
–0.2
0.8 ±0.2
S
6.0 ±0.3
4.4 ±0.15
1.27 TYP.
0.40
+0.10
–0.05
1
4
0.12 M
2.0 ±0.2
9
4.1 MAX.
8
5
0.10 S
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
–30
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (DC) Note1
Drain Current (pulse) Note2
VGSS
!20
V
ID(DC)1
!28
A
ID(DC)2
!15
A
ID(pulse)
!100
A
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C) Note1 PT2
40
W
3
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg –55 to +150 °C
IAS
−15
A
EAS
22.5
mJ
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec.
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15935EJ1V0DS00 (1st edition)
©
Date Published March 2002 NS CP(K)
Printed in Japan
2002
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