UPA1730TP View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
UPA1730TP Datasheet PDF : 8 Pages
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µ PA1730TP
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless otherwise noted, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
VDS = –30 V, VGS = 0 V
VGS = !20 V, VDS = 0 V
VDS = –10 V, ID = –1 mA
VDS = –10 V, ID = –6.5 A
VGS = –10 V, ID = –6.5 A
VGS = –4.5 V, ID = –6.5 A
VGS = –4.0 V, ID = –6.5 A
VDS = –10 V
–1 µA
!10 µA
–1.0 –1.6 –2.5 V
11.0 23.0
S
7.6 9.5 mΩ
10.3 13.5 mΩ
11.3 15.0 mΩ
3800
pF
Output Capacitance
Coss
VGS = 0 V
1200
pF
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Crss
f = 1 MHz
td(on)
VDD = –15 V, ID = –6.5 A
tr
VGS = –10 V
500
pF
15
ns
20
ns
Turn-off Delay Time
td(off)
RG = 10 Ω
130
ns
Fall Time
Total Gate Charge
Gate to Source Charge
tf
QG
VDD = –24 V
QGS
VGS = –10 V
50
ns
70
nC
9
nC
Gate to Drain Charge
QGD ID = –13.0 A
17
nC
Body Diode Forward Voltage
VF(S-D) IF = 13 A, VGS = 0 V
0.80
V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 13 A, VGS = 0 V
Qrr
di/dt = 100 A/ µs
53
ns
57
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG
50 Ω
VDD
VGS = –20 → 0 V
−
IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS (−)
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS (−)
VGS
Wave Form
0 10%
VDS (−)
VGS
90%
90%
VDS
VDS
0
Wave Form
10% 10%
90%
td(on) tr td(off) tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = −2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet G15935EJ1V0DS
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