µ PA1730TP
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Pulsed
20
18
VGS = −4.0 V
16
14
−4.5 V
12
−10 V
10
8
6
4
−50
0
ID = −6.5 A
50
100 150
Tch - Channel Temperature - ˚C
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Ciss
Coss
Crss
VGS = 0 V
f = 1 MHz
10
−0.1
−1
−10
VDS - Drain to Source Voltage - V
−100
1000
REVERSE RECOVERY TIME vs.
DIODE CURRENT
di/dt = 100 A/ µs
VGS = 0 V
100
10
1
−0.1
−1
−10
IF - Diode Current - A
−100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10
VGS = −4.0 V
1
0V
0.1
0.01
0.001
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
1000
SWITCHING CHARACTERISTICS
100
10
td(off)
tf
tr
td(on)
VDD = −15 V
VGS = −10 V
RG = 10 Ω
1
−0.1
−1
−10
ID - Drain Current - A
−100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−40
ID = −13.0 A
−30
−12
VDS = −24 V
VGS
−10
−15 V
−20
−6 V
−8
−6
−10
−4
−2
VDS
0
0
0 10 20 30 40 50 60 70
QG - Gate Charge - nC
Data Sheet G15935EJ1V0DS
5