DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
- 40
Pulsed
VGS = −4.5 V
−4.0 V
- 30
−2.5 V
- 20
- 10
0
0
- 1.4
- 1.2
- 0.2
- 0.4
- 0.6
- 0.8
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = −10 V
ID = −1.0 mA
-1
- 0.8
- 0.6
- 0.4
-50
0
50
100
150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
30
ID = −5.0 A
Pulsed
VGS = −2.5 V
20
10
−4.0 V
−4.5 V
0
-50
0
50
100
150
Tch – Channel Temperrature - °C
µ PA1818
FORWARD TRANSFER CHARACTERISTICS
- 100
- 10
VDS = −10 V
Pulsed
-1
- 0.1
- 0.01
TA = 125°C
75°C
25°C
−25°C
- 0.001
- 0.0001
- 0.5
-1
- 1.5
-2
- 2.5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = −10 V
Pulsed
10
TA = −25°C
25°C
75°C
125°C
1
0.1
- 0.01
- 0.1
-1
- 10
ID - Drain Current - A
- 100
DRAIN TO SOURCE ON-STATE RESISTANCE
vs.GATE TO SOURCE VOLTAGE
30
ID = −5.0 A
Pulsed
20
10
0
0
-2
-4
-6
-8
-10
-12
VGS - Gate to Source Voltage - V
4
Data Sheet G16254EJ1V0DS