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UPD16873A View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
Manufacturer
UPD16873A
NEC
NEC => Renesas Technology NEC
UPD16873A Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
µPD16873/A/B/C
CHARACTERISTICS (Unless otherwise specified, TA = 25°C, VDD = VM = 5 V)
Parameter
Symbol
<all>
VDD pin current (operating)
IDD
VDD pin current (standby)
IDD(ST)
<ST/SP, STB pin>
High level input voltage
VIH
Low level input voltage
VIL
Input pull-down resistance
RIND
<Oscillation circuit part>
Triangle wave oscillation
fPWM
frequency
<Hall amplifier part>
Same aspect input range
VHch
Hysteresis
VHhys
Input bias voltage
IHbias
<Hall bias part>
Hall bias voltage
VHB
<IND signal output part>
IND terminal high level votlage VFG_H
IND terminal low level voltage VFG_L
<Output part>
Output on resistance
RON
(upper + lower MOSFET)
Off state leakage
ID(OFF)
Output turn-on time
tONH
Output turn-off time
tOFFH
<Torque order part>
Control standard input votlage ECR
range
Control input voltage range
EC
Input current
IIN
Input voltage difference
ECR-EC
Dead zone (+)
Dead zone ()
<Over current detection part>
Input offset voltage
CL terminal voltage
EC_d+
EC_d
VIO
VCL
Condition
STB = VDD
STB = GND
CT = 330pF
VH = 2.5 V
IHB = 10 mA
IFG = 2.5 mA
IFG = +2.5 mA
ID = 200 mA
20°C < TA < 75°C
20°C < TA < 75°C
RM = 5
star connection
EC, ECR = 0.5 to 3.0 V
Duty = 100%, ECR = 2 V
exclusing dead zone
ECR = 2 V
ECR = 2 V
MIN.
TYP.
MAX
Unit
1.5
3.0
mA
1.0
µA
1.8
VDD
V
0.8
V
110
k
75
kHz
1.5
4.0
V
15
50
mV
1.0
µA
0.3
0.5
V
3.5
V
0.5
V
0.6
0.9
10
µA
1.0
µs
1.0
µs
0.3
4.0
V
0.3
4.0
V
70
µA
0.75
V
0
65
100
mV
0
65
100
mV
15
15
mV
90
100
110
mV
Thermal shut down circuit (TSD) works in TCH > 150°C.
Low voltage malfunction prevention circuit (UVLO) works in 4 V (TYP.).
Data Sheet S13870EJ1V0DS00
3

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