SNA-186-TR1 View Datasheet(PDF) - Stanford Microdevices
Part Name
Description
Manufacturer
SNA-186-TR1 Datasheet PDF : 3 Pages
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Product Description
Stanford Microdevices’ SNA-186 is a GaAs monolithic broad-
band amplifier (MMIC) housed in a low-cost surface-mount-
able plastic package. This amplifier provides 12dB of gain
and +13dBm of P1dB power when biased at 4V and 50mA.
The use of an external resistor allows for bias flexibility and
stability. These unconditionally stable amplifiers are designed
for use as general purpose 50 ohm gain blocks.
Also available in chip form (SNA-100), its small size (0.33mm
x 0.33mm) and gold metallization makes it an ideal choice for
use in hybrid circuits.
The SNA-186 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
Output Power vs. Frequency
15
14
13
dBm
12
11
10
0.1 0.5
1
1.5
2
4
6
8
GHz
SNA-186
DC-8 GHz, Cascadable
GaAs HBT MMIC Amplifier
Product Features
• Patented, Reliable GaAs HBT Technology
• Cascadable 50 Ohm Gain Block
• 12dB Gain, +13dBm P1dB
• 1.5:1 Input and Output VSWR
• Operates From a Single DC Supply
• Low Cost Surface Mount Plastic Package
Applications
• Narrow and Broadband Linear Amplifiers
• Commercial Communication Applications
Electrical Specifications at Ta = 25C
Sym bol
GP
P a ra m e te rs : Te s t C o n d itio n s :
Id = 5 0 m A , Z = 5 0 O h m s
0
S m a ll S ig n a l G a in
f = 0 .1 -2 .0 G H z
f = 2 .0 -6 .0 G H z
f = 6 .0 -8 .0 G H z
U n its
dB
dB
dB
M in .
1 0 .0
9 .0
8 .0
Ty p .
1 2 .0
11 .0
1 0 .0
M ax.
G
G a in F la tn e s s
F
f = 0 .1 -8 .0 G H z
dB
+ /-1 .0
B W 3 d B 3 d B B a n d w id th
GHz
8 .0
P 1dB
NF
VSW R
IP 3
O u tp u t P o w e r a t 1 d B C o m p re s s io n
N o is e F ig u re
In p u t / O u tp u t
T h ird O rd e r In te rc e p t P o in t
f = 0 .1 -6 .0 G H z
f = 6 .0 -8 .0 G H z
f = 0 .1 -6 .0 G H z
f = 6 .0 -8 .0 G H z
f = 0 .1 -8 .0 G H z
f = 0 .1 -6 .0 G H z
f = 6 .0 -8 .0 G H z
dB m
dB
dB m
1 3 .0
11 .0
6 .0
7 .0
1 .8 :1
26
24
TD
IS O L
G ro u p D e la y
R e v e rs e Is o la tio n
f = 2 .0 G H z
f = 0 .1 -8 .0 G H z
psec
dB
100
16
VD
D e v ic e V o lta g e
V
3 .5
4 .0
4 .5
d G /d T
D e v ic e G a in Te m p e ra tu re C o e ffic ie n t
d B /d e g C
-0 .0 0 1 5
d V /d T
D e v ic e V o lta g e Te m p e ra tu re C o e ffic ie n t
m V /d e g C
-4 .0
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
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