ASI10730 View Datasheet(PDF) - Advanced Semiconductor
Part Name
Description
Manufacturer
ASI10730 Datasheet PDF : 2 Pages
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VHB50-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB50-28S is an NPN
power transistor designed for 25 V
Class-C ground station transmitters, it
utilizes emitter ballasting and gold
metalization to provide optimum
VSWR capability.
FEATURES:
• Common Emitter
• PG = 6.0 dB at 50 W/175 MHz
• Omnigold™ Metalization System
• PG = 7.0 dB at 60 W/150 MHz
MAXIMUM RATINGS
IC
6.5 A
VCBO
65 V
VCEO
35 V
VEBO
4.0 V
PDISS
75W
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
2.3 °C/W
PACKAGE STYLE .380 4L STUD
.112x45°
A
B
C
E
E
ØC
B
D
#8-32 UNC-2A
HI
J
G
F
E
DIM
M IN IM U M
inches / mm
A
.220 / 5.59
B
.980 / 24.89
C
.370 / 9.40
D
.004 / 0.10
E
.320 / 8.13
F
.100 / 2.54
G
.450 / 11.43
H
.090 / 2.29
I
.155 / 3.94
J
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10730
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 200 mA
BVCES
IC = 200 mA
BVEBO
IE = 10 mA
ICBO
VCB = 30 V
hFE
VCE = 5.0 V
IC = 500 mA
Cob
VCB = 28 V
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
35
65
4.0
2.0
10
150
80
UNITS
V
V
V
mA
---
pF
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/2
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