DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

VN808SR(2009) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
VN808SR
(Rev.:2009)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
VN808SR Datasheet PDF : 17 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
VN808SR
Electrical characteristics
Table 5. Input pin
Symbol
Parameter
Test conditions
Min Typ Max Unit
VINL Input low level
IINL
Low level input
current
VIN = VCC / 2 - 1 V
VCC /2-1 V
80
µΑ
VINH
IINH
Input high level
High level input
current
VIN = VCC / 2 + 1 V
VCC /2+1
V
150 260 µΑ
VI(HYST)
Input hysteresis
voltage
) IIN
Input current
VIN = VCC = 32 V
0.6
V
300 µΑ
duct(s Table 6. Protections
ro Symbol
Parameter
Test conditions
Min Typ Max Unit
te P TCSD
ole TCR
Obs TCHYST
t(s) - TTSD
Case shut-down
temperature
Case reset
temperature
Case thermal
hysteresis
Junction shutdown
temperature
125 130 135 °C
110
°C
7
15
°C
150 175 200 °C
uc TR
Junction reset
temperature
135
°C
rod THYST
Junction thermal
hysteresis
7
15
°C
te P Ilim
DC Short circuit
current
VCC = 24 V; RLOAD = 10 m0.7
1.7
A
Obsole Vdemag
Turn-off output clamp
voltage
IOUT = 0.5 A; L = 6mH
VCC-57 VCC-52 VCC-47 V
Table 7.
Symbol
Status pin
Parameter
IHSTAT
ILSTAT
High level output
current
Leakage current
VCLSTAT Clamp voltage
Test conditions
VCC = 18...32 V; RSTAT = 1 k
(Fault condition)
Normal operation; VCC = 32 V
ISTAT = 1 mA
ISTAT = -1 mA
Min Typ Max Unit
2
3
4 mA
0.1 µA
6.0 6.8 8.0 V
-0.7
V
Doc ID 11624 Rev 5
5/17

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]