VND05BSP View Datasheet(PDF) - STMicroelectronics
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Description
Manufacturer
VND05BSP Datasheet PDF : 16 Pages
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Electrical specifications
2
Electrical specifications
Figure 3. Current and voltage conventions
VND05BSP
2.1
Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics sure
program and other relevant quality document.
Table 2. Absolute maximum ratings
Symbol
Parameter
V(BR)DSS Drain-Source breakdown voltage
IOUT Output current (cont.) at Tc=85°C
IOUT (RMS) RMS output current at Tc=85°C and f> 1Hz
IR
Reverse output current at Tc=85°C
IIN
Input current
-VCC Reverse supply voltage
ISTAT Status current
VESD Electrostatic discharge (1.5 kΩ, 100 pF)
Ptot Power dissipation at Tc = 25 °C
Tj
Junction operating temperature
Tstg Storage temperature
Value
Unit
40
V
9
A
9
A
-9
A
±10
mA
-4
V
±10
mA
2000
V
59
W
-40 to 150
°C
-55 to 150
°C
6/16
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