VSC7128QS View Datasheet(PDF) - Vitesse Semiconductor

Part Name

Description

Manufacturer

VSC7128QS

Hex Port Bypass Circuit / Dual Repeater for 1.0625 Gb/s FC-AL Disk Arrays

Vitesse Semiconductor 

VITESSE

SEMICONDUCTOR CORPORATION

Hex Port Bypass Circuit / Dual Repeater

for 1.0625 Gb/s FC-AL Disk Arrays

Advance Product Information

VSC7128

DC Characteristics (Over recommended operating conditions).

Parameters

VIH

VIL

IIH

IIL

VOH

VOL

VDD

PD

IDD

∆VIN(DF)

∆VOUT75

∆VOUT50

Description

Input HIGH voltage (TTL)

Input LOW voltage (TTL)

Input HIGH current (TTL)

Input LOW current (TTL)

Output HIGH Voltage (TTL)

Output LOW Voltage (TTL)

Supply voltage

Power Dissipation

Supply current

PECL input swing

PECL output swing: LSO, OUT

PECL output swing: LSO, OUT

Min Typ Max Units

Conditions

2.0 — 5.5

V

0

— 0.8

V

—

—

50 500

µA

VIN = 2.4 V

—

— -500

µA

VIN = 0.5 V

2.4

—

—

V

IOH = -1.0mA

—

—

0.5

V

IOL= +1.0mA

3.14 — 3.47

V

VDD = 3.3V + 5%

— 1.3 2.1

W

Outputs open, VDD = VDD max

— 390 620

mA Outputs open, VDD = VDD max

300

—

2600

mVp-p

AC Coupled.

Internally biased at VDD/2

1200 — 2200 mVp-p 75Ω to VDD – 2.0 V

1200 — 2200 mVp-p 50Ω to VDD – 2.0 V

Absolute Maximum Ratings (1)

Power Supply Voltage (VDD)..............................................................................................................-0.5V to +4V

PECL DC Input Voltage ......................................................................................................... -0.5V to VDD +0.5V

TTL DC Input Voltage.......................................................................................................................-0.5V to 5.5V

DC Voltage Applied to TTL Outputs .................................................................................... -0.5V to VDD + 0.5V

TTL Output Current ................................................................................................................................. +/-50mA

PECL Output Current ............................................................................................................................... +/-50mA

Case Temperature Under Bias ........................................................................................................ -55° to +125oC

Storage Temperature...................................................................................................................... -65° to + 150oC

Maximum Input ESD (Human Body Model) .............................................................................................. 1500 V

Recommended Operating Conditions

Power Supply Voltage................................................................................................................3.3V +/- 5%

Ambient Operating Temperature Range...............................................................0°C Ambient to +90°C Case

Notes:

1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without causing per-

manent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may

affect device reliability.

Page 4

© VITESSE SEMICONDUCTOR CORPORATION

741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896

G52177-0, Rev. 2.3

8/31/98

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