W986416DH View Datasheet(PDF) - Winbond

Part Name

Description

Manufacturer

W986416DH

1M x 4 BANKS x 16 BITS SDRAM

Winbond 

W986416DH

Addressing Sequence of Sequential Mode

A column access is performed by increasing the address from the column address which is input to the

device. The disturb address is varied by the Burst Length as shown in Table 1.

DATA

Data 0

Data 1

Data 2

Data 3

Data 4

Data 5

Data 6

Data 7

Table 1 Address Sequence of Sequential Mode

ACCESS ADDRESS

BURST LENGTH

n

n+1

n+2

n+3

n+4

n+5

n+6

n+7

BL = 2 (disturb address is A0)

No address carry from A0 to A1

BL = 4 (disturb addresses are A0 and A1)

No address carry from A1 to A2

BL = 8 (disturb addresses are A0, A1 and A2)

No address carry from A2 to A3

Addressing Sequence of Interleave Mode

A column access is started in the input column address and is performed by inverting the address bit in

the sequence shown in Table 2.

DATA

Data 0

Data 1

Data 2

Data 3

Data 4

Data 5

Data 6

Data 7

Table 2 Address Sequence of Interleave Mode

ACCESS ADDRESS

A8 A7 A6 A5 A4 A3 A2 A1 A0

BUST LENGTH

BL = 2

A8 A7 A6 A5 A4 A3 A2 A1 A0

A8 A7 A6 A5 A4 A3 A2 A1 A0

BL = 4

A8 A7 A6 A5 A4 A3 A2 A1 A0

A8 A7 A6 A5 A4 A3 A2 A1 A0

BL = 8

A8 A7 A6 A5 A4 A3 A2 A1 A0

A8 A7 A6 A5 A4 A3 A2 A1 A0

A8 A7 A6 A5 A4 A3 A2 A1 A0

Auto-precharge Command

If A10 is set to high when the Read or Write Command is issued, then the auto-precharge function is

entered. During auto-precharge, a Read Command will execute as normal with the exception that the

active bank will begin to precharge automatically before all burst read cycles have been completed.

Publication Release Date: April 11, 2002

-9-

Revision A4

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