WFF8N60 View Datasheet(PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
Part Name
Description
Manufacturer
WFF8N60 Datasheet PDF : 7 Pages
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www.DataSheet.in
Features
� 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V
� Ultra-low Gate charge(Typical 28nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Isolation Voltage (VISO=4000V AC)
� Maximum Junction Temperature Range(150℃)
WFF8N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL
Channel Temperature
*Drain current limited by junction temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
600
7.5*
4.3*
30
±30
240
15
4.5
48
0.38
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Min Typ Max
-
-
2.6
-
-
62.5
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
Units
℃/W
℃/W
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