WFP70N06T View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

WFP70N06T

N-Channel MOSFET

Unspecified 

Features

� 68A,60V, RDS(on)(Max18mΩ)@VGS=10V

� Ultra-low Gate charge(Typical 20nC)

� Improved dv/dt capability

� 100%Avalanche Tested

� Maximum Junction Temperature Range(175℃)

WFP70N06T

Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advanced planar

stripe,DMOS technology.This latest technology has been especially

designed to minimize on-state resistance, have a low gate charge

with superior switching performance, and rugged avalanche

characteristics,DC-DC Converters and power management in

portable and,battery operated products.

Absolute Maximum Ratings

Symbol

Parameter

VDSS

ID

Drain Source Voltage

Continuous Drain Current(@Tc=25℃)

Continuous Drain Current(@Tc=100℃)

IDM

Drain Current Pulsed

VGS

Gate to Source Voltage

EAS

Single Pulsed Avalanche Energy

dv/dt

Peak Diode Recovery dv /dt

Total Power Dissipation(@Tc=25℃)

PD

Derating Factor above 25℃

TJ,Tstg

Junction and Storage Temperature

Maximum Lead Temperature for soldering purpose,

TL

1/8 form Case for 5 seconds

Thermal Characteristics

Symbol

Parameter

RQJC

RQCS

RQJA

Thermal Resistance , Junction -to -Case

Thermal Resistance , Case-to-Sink

Thermal Resistance , Junction-to -Ambient

(Note1)

(Note2)

(Note3)

Value

60

68

51

280

±25

800

7.0

115

0.77

-55~175

300

Units

V

A

A

A

V

mJ

V/ ns

W

W/℃

℃

℃

Value

Min Typ Max

-

-

1.3

-

0.5

-

-

-

62.5

Units

℃/W

℃/W

℃/W

Rev.A Oct.2010

Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

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