WFU2N60B View Datasheet(PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
Part Name
Description
Manufacturer
WFU2N60B Datasheet PDF : 7 Pages
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WFU2N60B
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol Test Condition
Gate leakage current
IGSS
VGS=±30V,VDS=0V
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
Drain cut -off current
VDS=600V,VGS=0V
IDSS
VDS=480V,Tc=125℃
Drain -source breakdown voltage
V(BR)DSS ID=250 µA,VGS=0V
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
Drain -source ON resistance
RDS(ON) VGS=10V,ID=1A
Forward Transconductance
gfs
VDS=50V,ID=1A
Input capacitance
Ciss
VDS=25V,
Reverse transfer capacitance
Output capacitance
Crss
Coss
VGS=0V,
f=1MHz
Rise time
Switching time
Turn-on time
Fall time
tr
VDD=300V,
ton
ID=2A，
tf
RG=25Ω，
Turn-off time
toff
(Note4,5)
Total gate charge(gate-source
plus gate-drain)
VDD=320V,
Qg
VGS=10V,
Gate-source charge
Qgs
ID=2A
Gate-drain("miller") Charge
Qgd
(Note4,5)
Min
-
±30
-
-
600
2
-
-
-
-
-
-
-
-
-
-
-
-
Type Max Unit
-
±100 nA
-
-
V
-
10
µA
100
µA
-
-
V
-
4
V
4.5
5.0
Ω
2.25
-
S
280 330
6
8
pF
45
55
10
28
25
55
ns
20
60
25
60
9.0
12
nC
1.7
-
4.5
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition Min
Continuous drain reverse current
IDR
-
-
Pulse drain reverse current
IDRP
-
-
Forward voltage(diode)
VDSF
IDR=2.0A,VGS=0V
-
Reverse recovery time
trr
IDR=2.A,VGS=0V,
-
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
Type
-
-
-
180
0.72
Max Unit
2.0
A
8.0
A
1.4
V
-
ns
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH IAS=2A,VDD=50V,RG=0Ω ,Starting TJ=25℃
3.ISD≤2A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
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