W4NXE4C-LD00 View Datasheet(PDF) - Cree, Inc

Part Name

Description

Manufacturer

W4NXE4C-LD00

Silicon Carbide Substrates

Cree, Inc 

Product Descriptions

4H-Silicon Carbide

76.2mm Diameter

Effective December 1998 • Revised March 2003 • Page 5

STANDARD MICROPIPE DENSITY

Part Number

Type Orientation Micropipe Density Resistivity Ohm-cm Range Bin

W4NXE4C-0D00

n

4° off

31-100 micropipes/cm2

0.015-0.028

C

W4NXE8C-0D00

n

8° off

31-100 micropipes/cm2

0.015-0.028

C

W4NRE0X-0D00

n

on-axis

N/A

0.013-0.500

N/A

SELECT MICROPIPE DENSITY

W4NXE4C-SD00

n

4° off

16-30 micropipes/cm2

0.015-0.028

C

W4NXE8C-SD00

n

8° off

16-30 micropipes/cm2

0.015-0.028

C

LOW MICROPIPE DENSITY

W4NXE4C-LD00

n

4° off

[15 micropipes/cm2

0.015-0.028

C

W4NXE8C-LD00

n

8° off

[15 micropipes/cm2

0.015-0.028

C

SEMI-INSULATING (PROTOTYPE)

W4TXE0X-0D00 HPSI

on-axis

N/A

N/A

N/A

Share Link: