W4NXE4C-LD00 View Datasheet(PDF) - Cree, Inc

Part Name

Description

Manufacturer

W4NXE4C-LD00

Silicon Carbide Substrates

Cree, Inc 

Standard Specifications

Effective December 1998 • Revised March 2003 • Page 7

DEFINITION OF DIMENTIONAL PROPERTIES, TERMINOLOGY AND METHODS

Diameter

The linear dimension across the surface of a wafer.

Measurement is performed manually with ANSI

certified digital calipers on each individual wafer (see

Figure 1).

Thickness, Center Point

Measured with ANSI certified non-contact tools at the

center of each individual wafer.

Secondary Flat Orientation

A flat of shorter length than the primary orientation

flat, whose position with respect to the primary orienta-

tion flat identifies the face of the wafer.

Marking

The carbon face of each individual wafer is laser

marked with OCR compatible font (similar to defini-

tions and characteristics in SEMI M12).

Flat Length

Linear dimension of the flat measured with ANSI

certified digital calipers on a sample of one wafer per

ingot (see Figure 1).

Figure 1. Diameter and Primary and Secondary

Flat Dimension

Surface Orientation

Denotes the orientation of the surface of a wafer with

respect to a crystallographic plane within the lattice

structure. Measured with x-ray goniometer on a sample

of one wafer per ingot in the center of the wafer.

Orthogonal Misorientation

In wafers cut intentionally “off orientation,” the angle

between the projection of the normal vector to the

wafers surface onto a {0001} plane and the projection

on that plane of the nearest <1120> direction.

Primary Flat

The primary flat is the {1010} plane with the flat face

parallel to the <1120> direction.

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Primary Flat Orientation

The flat of the longest length on the wafer, oriented

such that the chord is parallel with a specified low

index crystal plane. Measured on one wafer per ingot

using Laue back-reflection technique with manual

angle measurement.

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