DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MC100ELT25MNR4 View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
MC100ELT25MNR4
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC100ELT25MNR4 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MC10ELT25, MC100ELT25
Table 7. AC CHARACTERISTICS VCC= 5.0 V; VEE= 5.0 V; GND= 0 V (Note 8 and Note 9)
40°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
fmax
Maximum Toggle Frequency
tPLH
Propagation Delay @ 1.5 V
tPHL
Propagation Delay @ 1.5 V
100
MHz
1.7
3.6 1.7
3.6 1.7
3.6 ns
2.6
4.1 2.6
4.1 2.6
4.1 ns
tJITTER
tr
tf
Random Clock Jitter (RMS)
Output Rise/Fall Times QTTL
10% 90%
35
ps
1.9
ns
2.3
VPP
Input Swing (Note 10)
200
1000 200
1000 200
1000 mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
8. VCC can vary ± 0.25 V.
VEE can vary +0.06 V to 0.5 V for 10ELT; VEE can vary +0.8 V to 0.5 V for 100ELT.
9. RL = 500 W to GND and CL = 20 pF to GND. Refer to Figure 2.
10. VPP(min) is the minimum input swing for which AC parameters are guaranteed. The device has a DC gain of 40.
APPLICATION
TTL RECEIVER
CHARACTERISTIC TEST
*CL includes
CL*
fixture
capacitance
RL
AC TEST LOAD
GND
Figure 2. TTL Output Loading Used for Device Evaluation
http://onsemi.com
4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]