AR1101S10 View Datasheet(PDF) - Power Semiconductors
Part Name
Description
Manufacturer
AR1101S10 Datasheet PDF : 4 Pages
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POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
RECTIFIER DIODE
FINAL SPECIFICATION
ago 02 - ISSUE : 05
Symbol Characteristic
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
AR1101
Repetitive voltage up to
Mean forward current
Surge current
Conditions
V=VRRM
1000 V
2250 A
28 kA
Tj
[°C]
Value
Unit
175 1000
V
175 1100
V
175
50
mA
CONDUCTING
I F (AV)
Mean forward current
I F (AV)
I FSM
I² t
V FM
V F(TO)
rF
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° sin ,50 Hz, Tc=85°C, double side cooled
Sine wave, 10 ms
without reverse voltage
Forward current =
1800 A
2250
A
2130
A
175
28
kA
3920 x 1E3 A²s
25 1.07
V
175 0.75
V
175 0.125
mohm
SWITCHING
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
µs
175
µC
A
MOUNTING
R th(j-h)
Thermal impedance, DC
R th(c-h)
Thermal impedance
Tj
Operating junction temperature
F
Mounting force
Mass
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
ORDERING INFORMATION : AR1101 S 10
standard specification
VRRM/100
37
°C/kW
7
°C/kW
-30 / 175
°C
11.8 / 13.2 kN
300
g
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