AR1101S10 View Datasheet(PDF) - Power Semiconductors

Part Name

Description

Manufacturer

AR1101S10

RECTIFIER DIODE

Power Semiconductors 

AR1101 RECTIFIER DIODE

FINAL SPECIFICATION ago 02 - ISSUE : 05

FORWARD CHARACTERISTIC

Tj = 175 °C

POSEICO

POSEICO SPA

POwer SEmiconductors Italian COrporation

SURGE CHARACTERISTIC

Tj = 175 °C

7000

6000

5000

4000

3000

2000

1000

0

0.6

1.1

1.6

Forward Voltage [V]

TRANSIENT THERMAL IMPEDANCE

DOUBLE SIDE COOLED

40.0

35.0

30.0

25.0

20.0

15.0

10.0

5.0

0.0

0.001 0.01

0.1

1

t[s]

10

100

30

25

20

15

10

5

0

1

10

100

n° cycles

All the characteristics given in this data sheet are guaranteed only with uniform

clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm

and roughness < 2 µm.

In the interest of product improvement POSEICO reserves the right to change any

data given in this data sheet at any time without previous notice.

If not stated otherwise the maximum value of ratings (simbols over shaded

background) and characteristics is reported.

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