2N02 View Datasheet(PDF) - Zetex => Diodes
Part Name
Description
Manufacturer
2N02 Datasheet PDF : 7 Pages
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ZXM62N02E6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
V(BR)DSS 20
IDSS
IGSS
VGS(th) 0.7
RDS(on)
Forward Transconductance
DYNAMIC (3)
gfs
3.2
V
ID=250µA, VGS=0V
1
µA VDS=20V, VGS=0V
100
nA VGS=± 12V, VDS=0V
V
ID=250µA, VDS= VGS
0.1
Ω
0.125 Ω
VGS=4.5V, ID=2.2A
VGS=2.7V, ID=1.1A
S
VDS=10V,ID=1.1A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Ciss
Coss
Crss
460
pF
VDS=15 V, VGS=0V,
150
pF f=1MHz
50
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
4.0
10.4
16.9
8.0
6.3
1.5
2.5
ns
ns VDD =10V, ID=2.2A
ns
RG=6.0Ω, RD=4.4Ω
(refer to test
ns circuit)
nC
V D S= 16 V , V GS= 4 . 5V ,
nC ID=2.2A (refer to
test circuit)
nC
Diode Forward Voltage (1)
VSD
0.95
Reverse Recovery Time (3)
trr
17.5
Reverse Recovery Charge (3)
Qrr
8.6
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
V
Tj=25°C, IS=2.2A,
V G S= 0V
ns Tj=25°C, IF=2.2A,
di/dt= 100A/µs
nC
ISSUE 1 - JUNE 2004
4
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