ZXMN10A07Z(2004) View Datasheet(PDF) - Zetex => Diodes

Part Name

Description

Manufacturer

ZXMN10A07Z
(Rev.:2004)

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMN10A07Z

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

STATIC

Drain-source breakdown voltage

Zero gate voltage drain current

Gate-body leakage

Gate-source threshold voltage

Static drain-source on-state

resistance (1)

Forward transconductance (1) (3)

DYNAMIC (3)

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

gfs

100

V ID= 250␮A, VGS=0V

1

␮A VDS= 100V, VGS=0V

100 nA VGS=Ϯ20V, VDS=0V

2.0

V ID= 250␮A, VDS=VGS

0.7

⍀ VGS= 10V, ID= 1.5A

0.9

⍀ VGS= 6V, ID = 1A

1.6

S VDS= 15V, ID= 1A

Input capacitance

Output capacitance

Reverse transfer capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

138

pF

12

pF VDS= 50V, VGS=0V

f=1MHz

6

pF

Turn-on-delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate drain charge

SOURCE-DRAIN DIODE

Diode forward voltage (1)

Reverse recovery time (3)

Reverse recovery charge (3)

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

trr

Qrr

1.8

ns

1.5

ns VDD= 50V, ID= 1A

4.1

ns RG≅6.0⍀, VGS= 10V

2.1

ns

2.9

nC

0.7

nC VDS= 50V, VGS= 10V

1

nC ID= 1A

0.85 0.95

27

12

V Tj=25°C, IS= 1.5A,

VGS=0V

ns Tj=25°C, IF= 1A,

nC di/dt=100A/␮s

NOTES

(1) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

SEMICONDUCTORS

4

ISSUE 6 - MAY 2004

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