ZXMN10A07Z View Datasheet(PDF) - Zetex => Diodes

Part Name

Description

Manufacturer

ZXMN10A07Z

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMN10A07Z

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).

PARAMETER

SYMBOL

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th)

Static Drain-Source On-State Resistance RDS(on)

(1)

Forward Transconductance (1)(3)

gfs

DYNAMIC (3)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

Diode Forward Voltage (1)

VSD

Reverse Recovery Time (3)

trr

Reverse Recovery Charge (3)

Qrr

MIN.

100

2.0

TYP. MAX. UNIT CONDITIONS.

V ID=250␮A, VGS=0V

1.0 ␮A VDS=100V, VGS=0V

100 nA VGS=Ϯ20V, VDS=0V

V ID=250␮A, VDS= VGS

1.0 ⍀ VGS=10V, ID=1.5A

1.1 ⍀ VGS=6V, ID=1A

1.6

S VDS=15V,ID=1A

138

pF

12

pF

VDS=50 V, VGS=0V,

f=1MHz

6

pF

1.8

ns

1.5

ns VDD =50V, ID=1.0A

4.1

ns RG=6.0⍀, VGS=10V

2.1

ns

2.9

nC

0.7

nC

VDS=50V,VGS=10V,

ID=1.0A

1.0

nC

0.84 0.95

27

12

V TJ=25°C, IS=1.5A,

VGS=0V

ns TJ=25°C, IF=1.0A,

nC di/dt= 100A/µs

NOTES

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ISSUE 1 - MARCH 2002

4

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