ZXMN6A09GTC View Datasheet(PDF) - Zetex => Diodes
Part Name
Description
Manufacturer
ZXMN6A09GTC Datasheet PDF : 7 Pages
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ZXMN6A09G
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
V(BR)DSS 60
IDSS
IGSS
VGS(th) 1.0
RDS(on)
Forward Transconductance (3)
gfs
15
DYNAMIC (3)
V
ID=250µA, VGS=0V
1
µA VDS=60V, VGS=0V
100
nA VGS=±20V, VDS=0V
V
0.045 Ω
0.070 Ω
ID=250µA, VDS= VGS
VGS=10V, ID=8.2A
VGS=4.5V, ID=7.4A
S
VDS=15V,ID=8.2A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Ciss
Coss
Crss
1407
121
59
pF
VDS=40 V, VGS=0V,
pF f=1MHz
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
4.9
5.0
25.3
4.6
12.4
24.2
5.2
3.5
ns
ns VDD =15V, ID=3.5A
ns
RG≅6.0Ω, VGS=10V
(refer to test
ns circuit)
nC VDS=15V,VGS=5V,
ID=3.5A
nC
VDS=15V,VGS=10V,
nC ID=3.5A
nC
Diode Forward Voltage (1)
VSD
0.85 0.95
Reverse Recovery Time (3)
trr
26.3
Reverse Recovery Charge (3)
Qrr
26.6
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
V
TJ=25°C, IS=6.6A,
VGS=0V
ns TJ=25°C, IF=3.5A,
di/dt= 100A/µs
nC
SEMICONDUCTORS
PROVISIONAL ISSUE D - SEPTEMBER 2003
4
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