1N6642U02D(2011) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

1N6642U02D
(Rev.:2011)

Aerospace 0.3 A - 100 V switching diode

STMicroelectronics 

Characteristics

1N6642U

Figure 3.

Reverse leakage current versus

reverse voltage applied

(typical values)

IR(nA)

1.E+03

1.E+02

Tj=150 °C

1.E+01

Tj=75 °C

1.E+00

Tj=25 °C

1.E-01

0

VR (V)

10 20 30 40 50 60 70 80 90 100 110

Figure 4.

Relative variation of thermal

impedance, junction to case,

versus pulse duration

Z /R th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4 Single pulse

0.3

0.2

0.1

0.0

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

tP(s)

1.E-01

1.E+00

Figure 5.

Junction capacitance versus reverse voltage applied (typical values)

C(pF)

10.0

F=1 MHz

VOSC=30 mVRMS

Tj=25 °C

1.0

0.1

1

VR(V)

10

100

4/7

Doc ID 16972 Rev 2

Share Link: