TK20E60W,S1VX View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
TK20E60W,S1VX Datasheet PDF : 10 Pages
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TK20E60W
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
Drain cut-off current
IDSS
VDS = 600 V, VGS = 0 V
Drain-source breakdown voltage
V(BR)DSS ID = 10 mA, VGS = 0 V
600
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.7
Drain-source on-resistance
RDS(ON) VGS = 10 V, ID = 10 A
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Typ. Max Unit
±1
µA
10
V
3.7
0.13 0.155 Ω
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Effective output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
Symbol
Test Condition
Ciss
Crss
Coss
Co(er)
rg
tr
ton
tf
toff
dv/dt
VDS = 300 V, VGS = 0 V, f = 1 MHz
VDS = 0 to 400 V, VGS = 0 V
VDS = OPEN, f = 1 MHz
See Figure 6.2.1
VDD = 0 to 400 V, ID = 5 A
Min Typ. Max Unit
1680
pF
7
40
70
1.5
Ω
25
ns
50
6
100
50
V/ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Test Condition
Qg
VDD ≈ 400 V, VGS = 10 V, ID = 20 A
Qgs1
Qgd
Min Typ. Max Unit
48
nC
11
22
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Diode dv/dt ruggedness
Symbol
Test Condition
VDSF
trr
Qrr
Irr
dv/dt
IDR = 20 A, VGS = 0 V
IDR = 10 A, VGS = 0 V
-dIDR/dt = 50 A/µs
IDR = 10 A, VGS = 0 V, VDD = 400 V
Min Typ. Max Unit
-1.7
V
330
ns
2.9
µC
16
A
15
V/ns
3
2013-12-26
Rev.4.0
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